Citation link:
Authors:
Ivanova, Malinka Spasova; Иванова, Малинка Спасова; Donoval, Daniel; Доновал, Даниел; Marek, Juraj; Марек, Журай; Vrbicky, Andrej
Title:
The influence of fabrication steps on selected properties of power dmos transistor
Date of Issue:
2007
Is Part of:
Proceedings of the Technical University – Sofia, 57(2), 2007, pp. 248-253
Publisher:
TU – Sofia
Identifiers:
1311-0829 [issn]
Type:
Article
Language:
eng
Abstract:
The high-voltage power DMOS transistors are widely used for various power electronic applications as motor controls and power switching supplies. Research and optimization of their characteristics is one of the challenges of power MOS transistor design. The Technology CAD (TCAD) tools support process and device simulation and help to predict the technology parameters for achieving required structure parameters. In presented paper the influence of fabrication steps and structure parameters on the selected properties of power DMOS transistor are analyzed by 2-D numerical modeling and simulation.
Description:
Reviewer prof. Marin Hristov. - Incl. figures and schemes. - References, pp. 253
