Citation link:
Authors:
Palankovski, Vassil; Hristov, Marin Hristov; Philippov, Philipp Ivanov
Title:
Two-dimensional physical ac-simulation of gaas hbts
Date of Issue:
2006
Publisher:
TU - Sofia
Identifiers:
1311-0829 [issn]
Type:
Article
Language:
eng
Subject:
GaAs HBTs; physical modeling; device simulation
Abstract:
: In this work, results from fully two-dimensional physical device simulation of Gallium Arsenide (GaAs) heterostructure bipolar transistors (HBTs) are presented. Scattering parameters (S-parameters) are directly obtained from small-signal AC-analysis of real devices. A comparison reveals very good agreement with measured data.
Description:
Reviewer prof. Tihomir Takov. - Formulas, diagr. - References, pp. 150-151
