Citation link:
Authors:
Съева, Дочка; Sueva, Dochka; Тонева, Атанаска; Toneva, Atanaska
Title:
Позиционно - чувствителен фотодетектор на основата на хидрогенезиран аморфен силиций
Other Titles:
Hydrogenated amorphous silicon thin film based position sensitive photodetector
Date of Issue:
1995
Is Part of:
Proceedings of the Technical University – Sofia, 48(5), 1995, pp. 169-176
Publisher:
Технически университет - София
Identifiers:
0374-342X [issn]
Type:
Article
Language:
bul
Subject:
фотодетектор; хидрогенезиран аморфен силиций
Abstract:
The possibility for fabrication of the position sensitive photodetector (PSP) on the base of the updoped hydrogenated amorphous silicon (a-Si:H) thin films is studied. The amorphous silicon thin films are deposited by homogeneous chemical vapor deposition method. The thin films are thickness varieds from 0,5 to 1 pm.
PSP employ a Schottky-type structure as ITO/a-Si:H/Pd on the glass substrate. The position characteristics at different intensity of light probe are measured.
Description:
Съдържа схеми. – Библиогр., с. 175.
