Citation link:
Authors:
Andonova, Anna Vladova; Андонова, Анна Владова; Gadjeva, Elisaveta Dimitrova; Гаджева, Елисавета Димитрова; Draganska, Polya Georgieva; Драганска, Поля Георгиева; Pavlov, Galin; Павлов, Галин; Marinov, Ivan Yotov; Маринов, Иван Йотов
Title:
Modified compact model of mosfet working under ESD stress
Date of Issue:
2007
Is Part of:
Proceedings of the Technical University – Sofia, 57(2), 2007, pp. 244-247
Publisher:
TU – Sofia
Identifiers:
1311-0829 [issn]
Type:
Article
Language:
eng
Abstract:
A modified compact model to simulate the high current characteristics of a MOSFET working under ESD stress is developed. The model realized with current source is used to demonstrate the better accuracy of simulated I-V characteristics for the snapback region. The variation of the simulated output I-V characteristics from gate voltage values is presented graphically.
Description:
Reviewer prof. Marin Hristov. - Incl. figures, formulas and schemes. - References, pp. 247
